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Energy-saving MOSFETs target mobile applications





Courtesy of eeProductCenter

Neubiberg, Germany — Infineon Technologies has introduced a family of power semiconductors optimized for use in DC/DC converter applications for mobile electronics devices. The OptiMOS 3 M 30-V power MOSFET family consists of 18 devices, which are available in SSO8 and S3O8 packages.

The OptiMOS 3 M series 30-V N-channel MOSFET family is targeted at applications in which only a 5-V drive is available. In addition to mobile and handheld devices, these power semis can be used in graphic cards, industrial controls, embedded converters, switched-mode power supplies and many slots on notebook computer motherboards.

The power semiconductors offer an on-resistance (RDS(on)) at 4.5 V, which significantly reduces on-state power dissipation, said Infineon. The devices also offer a reduction in gate charge. For example, the BSC100N03MS G, with a 10-milliohm RDS(on) provides a maximum gate charge rating of 11 nC.

The OptiMOS 3 M series MOSFETs are available in 30 mm SSO8 (SuperSO8) and 3 x 3-mm S3O8 (Shrink SuperSO8) packages. In a SuperSO8 package, an OptiMOS 3 M series MOSFET can achieve an RDS(on) of 2.0 milliohms at 4.5 V (1.6 milliohms at 10 V), which delivers a 38 percent improvement over the nearest competitor in a comparable package, said Infineon.

In a S3O8 package, a RDS(on) as low as 4.3 milliohms at 4.5 V (3.5 milliohms at 10 V) can be achieved. This is said to be a reduction of almost 50 percent in RDS(on) over the nearest competitor in the same package.

Other features include an improved on-state resistance thermal coefficient, which reduces junction temperature, and a Moisture Sensitivity Level rating of 1 (MSL1), which classifies the MOSFETS as non-moisture-sensitive and simplifies handling during production and storage. The specified 30-V breakdown voltage ensures safe operation during spikes.

Pricing: The BSC016N03MS G, with a RDS(on) of 1.6 milliohms, in a SSO8 package is priced at $0.88 in quantities of 10,000. In a S3O8 package, the price of a 3.5-milliohm BSZ035N03MS G device is $0.56 in quantities of 10,000.
Product information: MOSFETS

Infineon Technologies North America Corp., www.infineon.com



 






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